2014

1. E. Žąsinas, J.V. Vaitkus, „The non-exponential and non-Auger-like time dependence of non-equilibrium free carrier concentration decay in a semiconductor with two deep levels at high injection rates“, Physica B, Vol. 432, p. 45-52, 2014.
2. T. Grinys, M. Dmukauskas, M. Ščiuka, S. Nargelas, A. Melninkaitis, „Evolution of femtosecond laser-induced damge in doped GaN thin films“, Applied Physics A, Vol. 114, p. 381-385, 2014.
3. E. Gaubas, T. Čeponis, A. Jasiūnas, V. Kovalevskij, D. Meškauskaitė, J. Pavlov, V. Remeikis, A. Tekorius, J.V. Vaitkus, „Correlative analysis of the in situ changes of carrier decay and proton induced photoluminescence characteristics in chemical vapor deposition grown GaN“, Applied Physics Letters, Vol. 104, p. 062104, 2014.
4. E. Gaubas, T. Čeponis, J. Pavlov, A. Baškevičius, “Profiling of the injected charge drift current transients by cross-sectional scanning technique”, Journal of Applied Physics, Vol. 115, p. 054509, 2014.
5. A. Zabiliūtė, S. Butkutė, A. Žukauskas, P. Vitta, A. Kareiva, “Sol-gel synthesized far-red chromium-doped garnet phosphors for phosphor-conversion light-emitting diodes that meet the photomorphogenetic needs of plants”, Applied Optics, Vol. 53 (5), p.907-914, 2014.
6. R. Aleksiejūnas, K. Gelžinytė, S. Nargelas, K. Jarašiūnas, M. Vengris, E.A. Amour, D.P. Bymes, R.A. Arif, S.M. Lee, G.D. Papasouliotis, “Diffusion-driven and excitation-dependent recombination rate in blue InGaN/GaN quantum well structures”, Applied Physics Letters, Vol, 104, p. 022114, 2014.
7. G. Liaugaudas, P. Ščajev, K. Jarašiūnas, “Carrier dynamics and photoelectrical parameters in highly compensated sublimation grown 3C-SiC layers studied by time-resolved nonlinear optical techniques”, Semiconductor Science and Technology, Vol. 29, p. 015004 (1-8), 2014.
8. J. Mickevičius, J. Jurkevičius, G. Tamulaitis, M.S. Shur, M. Shatalov, J. Yang, R. Gaska, “Influence of carrier localization on high-carrier density effects in AlGaN quantum wells”, Optics Express, Vol. 22 (S2), p. A491-A497, 2014.
9. T. Serevičius, R. Komskis, P. Adomėnas, O. Adomėnienė, V. Jankauskas, A. Gruodis, K. Kazlauskas, S. Juršėnas, „Non-symmetric 9,10-diphentylanthracence-based deep-blue emitters with enhanced charge transport properties“, Physical Chemistry Chemical Physics, Vol. 16, p. 7089-7101, 2014.
10. V. Kononets, D. Dobrovolskas, S. Neicheva, N. Starzhinsky, O. Sidletskiy, K. Lebbou, G. Tamulaitis, “Confocal microscopy of luminescence inhomogeneity in LGSO:Ce scintillator crystals“, IEEE Transactions on Nuclear Science, Vol. 61 (1), p. 343-347, 2014.
11. D. Gudeika, J.V. Gražulevičius, G. Sini, A. Bučinskas, V. Jankauskas, A. Miasojedovas, S. Juršėnas, „New derivatives of triphenylamine and naphthalimide as ambipolar organic semiconductors: experimental and theoretical approach“, Dyes and Pigments, Vol. 106, p. 58-70, 2014.
12. E. Gaubas, T. Čeponis, A. Jasiūnas, V. Kalendra, J. Pavlov, „Lateral scan profiles of the recombination parameters correlated with distribution of grown-in impurities in HPHT diamond“, Diamond and Related Materials, Vol. 47, p. 15-26, 2014.
13. E. Gaubas, T. Čeponis, A. Jasiūnas, J. Pavlov, A. Tekorius, D. Shevchenko, K. Katrunov, V. Kovalevskij, V. Remeikis, S. Galkin, G. Tamulaitis, „In situ variation of proton-induced luminescence in ZnSe cfrystals“, Journal of Physics D: Applied Physics, Vol. 47, p.265102, 2014.
14. S. Raišys, K. Kazlauskas, M. Daškevičienė, T. Malinauskas, V. Getautis, S. Juršėnas, “Exciton diffusion enhancement in triphenylamines via incorporation of phenylethenyl sidearms”, Journal of Materials Chemistry C, Vol. 2, p. 4792-4798, 2014.
15. P. Ščajev, “Application of excite-probe techniques for determination of surface, bulk and nonlinear recombination rates in cubic SiC”, Materials Science and Engineering B-Advanced Functional Solid-State Materials, Vol. 185, p. 37-44, 2014.
16. A. Žukauskas, R. Vaicekauskas, A. Tuzikas, A. Petrulis, R. Stanikūnas, A. Švegžda, P. Eidikas, P. Vitta, “Firelight LED source: Toward a balanced approach to the performance of solid-state lighting for outdoor environments”, IEEE Photonics Journal, Vol. 6 (3), p. 8200316 (16p.), 2014.
17. V. Grivickas, K. Gulbinas, V. Gavryushin, V. Bikbajevas, O.V. Korolik, A.V. Mazanik, A.K. Fedotov, “Room-temperature photoluminescence in quasi-2D TlGaSe2 and TlInS2 semiconductors”, Physica Status Solidi – Rapid Research Letters, Vol. 8, p. 639-642, 2014 2014.
18. V. Bikbajevas, A. Kadys, R. Tomašiūnas, R. Pūras, S. Urnikaitė, V. Getautis, “Photoisomerization of azophenylcarbazole SAM on GaN”, Molecular Crystals and Liquid Crystals, Vol. 604, p. 52-58 2014.
19. A. Arnatkevičiūtė, I. Reklaitis, A. Kadys, T. Malinauskas, S. Stanionytė, G. Juška, M.V. Rzheutski, R. Tomašiūnas, „Relationships between strain and recombination in intermediate growth stages of GaN“, Journal of Electronic Materials, Vol. 43 (7), p. 2667-2675 2014.
20. R. Dargis, A. Clark, F.E. Arkun, T. Grinys, R. Tomašiūnas, A. O’Hara, A.A. Demkov, “Monolithic integration of rare-earth oxides and semiconductors for on-silicon technology”, Journal of Vacuum Science and Technology A, Vol. 32, p. 041506, 2014.
21. V. Viliūnas, H. Vaitkevišius, R. Stanikūnas, P. Vitta, R. Bliumas, A. Auškalnytė, A. Tuzikias, A. Petrulis, L. Dabasinskas, A. Žukauskas, „Subjective evaluation of luminance distribution for intelligent outdoor lighting“, Lighting Research and Technology, Vol. 46, p. 421-433, 2014.
22. A. Vaitkevičius, J. Mickevičius, D. Dobrovolskas, O. Tuna, C. Giesen, M. Heuken, G. Tamulaitis, “Influence of quantum-confined Stark effect on optical properties within trench defects in InGaN quantum wells with different indium content”, Journal of Applied Physics, Vol. 115, p. 213512, 2014.
23. D. Shevchenko, J. Mickevičius, N. Starzhinskiy, I. Zenya, A. Zhukov, G. Tamulaitis, “Luminescence in ZnSe scintillation crystals co-doped with oxygen and aluminum”, Nuclear Instruments and Methods in Physics Research A, Vol. 749, p. 14-18, 2014.
24. E. Gaubas, I. Brytavskyi, T. Čeponis, A. Jasiūnas, V. Kalesinskas, V. Kovalevskij, D. Meškauskaitė, J. Pavlov, V. Remeikis, G. Tamulaitis, and A. Tekorius, „In situ variations of carrier decay and proton induced luminescence characteristics in polycrystalline CdS“, Journal of Applied Physics, Vol. 115, p. 243507, 2014.
25. E. Gaubas, T. Čeponis, J. Pavlov, A. Velička, V. Kalesinskas, “Spectroscopy of radiation traps in Si by temperature dependent photoconductivity and generation currents”, Lithuanian Journal of Physics, Vol. 54, p. 89-93, 2014.
26. J. Juodkazytė, B. Šebeka, I. Savickaja, A. Kadys, E. Jelmakas, T. Grinys, S. Juodkazis, K. Juodkazis, T. Malinauskas, “InxGa1xN performance as a band-gap-tunable photo-electrode in acidic and basic solutions”, Solar Energy Materials and Solar Cells, Vol. 130, p. 36–41, 2014.
27. A. Mekys, V. Rumbauskas, J. Storasta, L. Makarenko, J.V. Vaitkus, “Defect analysis in fast electron irradiated silicon by Hall and magnetoresistivity means”, Nuclear Instruments and Methods in Physics Research B, Vol. 338, p. 95-100, 2014.
28. A. Tuzikas, A. Žukauskas, R. Vaicekauskas, A. Petrulis, P. Vitta, M. Shur, „Artwork visualization using a solid-state lighting engine with controlled photochemical safety“, Optics Express, Vol. 22, p. 16802-16818. 2014.
29. A. Mekys, V. Rumbauskas, J. Storasta, L. Makarenko, N. Kazuchits, and J.V. Vaitkus, “Hall effect and magnetoresistance investigation of fast electron irradiated silicon”, Lithuanian Journal of Physics, Vol. 54, p. 94–98, 2014.
30. D. Dobrovolskas, J. Mickevičius, S. Nargelas, H.S. Chen, C.G. Tu, C.H. Liao, C.Y. Su, G. Tamulaitis, C.C. Yang, „InGaN/GaN MQW photoluminescence enhancement by localized surface plasmon resonance on isolated Ag nanoparticles“, Plasmonics, Vol. 9, p. 1183-1187, 2014.
31. A. Novičkovas, A. Baguckis, A. Vaitkūnas, A. Mekys, and V. Tamošiūnas,”Investigation of solar simulator based in high-power light-emitting diodes”, Lithuanian Journal of Physics, Vol. 54 (2), p. 114–119, 2014.
32. E. Jelmakas, M. Alsys, P. Gečys, A. Kadys, G. Račiukaitis, S. Margueron, R. Tomašiūnas, “GaN epitaxial lateral overgrowth on laser-textured sapphire”, Physica Status Solidi A: Application and Material Science, Vol. 211 (12) p. 2848-2853, 2014.
33. S Krotkus, S. Miasojedovas, S. Juršėnas, “Threshold of stimulated emission in GaN layers grown by various techniques”, Physica B, Vol. 450, p. 16-20, 2014.
34. S. Marcinkevičius, K. Gelžinytė, Y. Zhao, S. Nakamura, S.P. DenBaars, and J.S. Speck, “Carrier redistribution between different potential sites in semipolar (20-21) InGaN quantum wells studied by near-field photoluminescence”, Applied Physics Letters, Vol. 105, p. 111108, 2014.
35. A. Kadys, T. Malinauskas, M. Dmukauskas, I. Reklaitis, K. Nomeika, V. Gudelis, R. Aleksiejūnas, P. Ščajev, S. Nargelas, S. Miasojedovas, and K. Jarašiūnas, “Photoluminescence features and carrier dynamics in InGaN heterostructures with wide staircase interlayers and differently sharped quantum wells”, Lithuanian Journal of Physics, Vol. 54 (3), p. 187-198, 2014.
36. K. Kazlauskas, G. Kreiza, E. Arbačiauskiene, A. Bieliauskas, V. Getautis, A. Šačkus, and S. Juršėnas, ”Morphology and Emission Tuning in Fluorescent Nanoparticles Based on Phenylenediacetonitrile”, Journal of Physical Chemistry C, Vol. 118, p. 25261-25271, 2014.
37. A.F. Orliukas a, K.-Z. Fung b, V. Venckutėa, V. Kazlauskienė, J. Miškinis, A. Dindune, Z. Kanepe, J. Ronis, A. Maneikis, T. Šalkus, and A. Kežionis, “SEM/EDX, XPS, and impedance spectroscopy of LiFePo4 and LiFePO4/C ceramics”, Lithuanian Journal of Physics, Vol. 54(2), p. 106–113, 2014.
38. G. Tamulaitis, J. Mickevičius, J. Jurkevičius, M.S. Shur, M.Shatalov, J. Yang c, R.Gaska, “Photoluminescence efficiency in AlGaN quantum wells”, Physica B, Vol. 453, p. 40-42, 2014.
39. A. Zabiliūtė, R. Vaicekauskas, P. Vitta, A. Žukauskas, „Phosphor-converted LEDs with low circadian action for outdoor lighting“, Optics Letters Vol. 39 (3), p. 563-566, 2014.
40. K. Gulbinas, V. Grivickas, V. Gavriūšinas, „Anisotropy of band gap absorption in TlGaSe2 semiconductor by ferroelectric phase transformation“, Applied Physics Letters Vol. 105, p. 242107, 2014.
41. E. Gaubas, T. Čeponis, A. Jasiūnas, J. Pavlov, A. Tekorius, D. Shevchenko, K. Katrunov, V. Kovalevskij, V. Remeikis, S. Galkin, and G. Tamulaitis,”In situ variations of proton-induced luminescence in ZnSe crystals”, Journal of Physics D: Applied Physics, Vol. 47, p. 265102 (7pp), 2014.
42. V. Fadeyev, S.Elya, Z.Galloway, J.Ngo, C.Parker, H.F.-W.Sadrozinski, M. Christophersen, B.F.Phlips, G.Pellegrini, J.M.Rafi, D.Quirion, G.-F.DallaBetta, M. Boscardin, G.Casse, I.Gorelov, M.Hoeferkamp, J.Metcalfe, S.Seidel, E. Gaubas, T.Čeponis, J.V.Vaitkus, “Update on scribe–cleave–passivate (SCP) slim edge technology for silicon sensors: Automated processing and radiation resistance”, Nuclear Instruments and Methods in Physics Research A: Accelerators, Spectrometers, Detectors and Associated Equipment, Vol. 765, p. 59-63, 2014.
43. E. Gaubas, T. Čeponis, J. Pavlov, A. Jasiūnas, V. Jonkus, D. Meskauskaite and A. Tekorius, “Carrier decay and luminescence characteristics in hadron irradiated MOCVD GaN”, Journal of Instrumentation, Vol. 9, C12044, 2014.